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- 5 - datasheet DDR4 SDRAM Rev.1.5 K4A8G165WC 1. Ordering Information [ Table 1 ] Samsung 8Gb DDR4 C-die ordering information table NOTE: 1. Speed bin is in order of CL-tRCD-tRP.

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Automotive DDR3L SDRAM MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description DDR3L SDRAM (1.35V) is a low voltage version of the

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1.35V Automotive DDR3L SDRAM MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks Description The 1.35V DDR3L SDRAM device is a low-voltage ver-

Products and specifications discussed herein are subject to change by Micron without notice. 1Gb: x4, x8, x16 DDR3 SDRAM Features PDF: 09005aef826aa906/Source: 09005aef82a357c3 Micron Technology, Inc., reserves the right to change products or specifications without notice.

– 54-ball VFBGA (x16) (8mm x 14 mm) Pb-free BG4 – 54-ball VFBGA (x16) (8mm x 8 mm) F45 – 54-ball VFBGA (x16) (8mm x 8 mm) Pb-free B45 ... MT48LC16M16A2FG 16 Meg x 16 54-ball FBGA MT48LC16M16A2BG 16 Meg x 16 54-ball FBGA Note: 1. Actual FBGA part marking is shown in Package Dimensions (page 15).

DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description DDR3L SDRAM (1.35V) is .

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Table 1: Key Timing Parameters Speed Grade Data Rate (MHz) CL = 3 CL = 4 CL = 5 CL = 6 CL = 7 tRC (ns)-187E 400 533 800 800 1066 54-25E 400 533 800 800 n/a 55

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DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Features •Vdd = +1.8V ±0.1V, VddQ = +1.8V ±0.1V

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DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description DDR3L SDRAM (1.35V) is .

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DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks Features •VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V •JEDEC-standard 1.8V I/O (SSTL_18-compatible) •Differential data strobe (DQS, DQS#) option •4n-bit prefetch architecture •Duplicate output strobe (RDQS) option for x8

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